• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
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  • 优先权
    • 专利摘要:
    The invention relates to a radiation source comprising: - a support (400) provided with a wall (410); a membrane (200) comprising two faces, the membrane (200) being adapted to emit infrared radiation on one and the other of its faces, and kept in suspension with respect to the support (400), the rear face ( 220) at right and at a distance D from the wall (410); electrostatic actuation means (300) adapted to vary the distance D; The membrane (200) and the means (300) being arranged so that, for each wavelength, the infrared radiation emitted by the rear face (220), is reflected by the wall (410), passes through the membrane (200). ) and interferes with the infrared radiation emitted by the front panel (210).
    公开号:FR3072788A1
    申请号:FR1760055
    申请日:2017-10-24
    公开日:2019-04-26
    发明作者:Salim BOUTAMI；Emerick LORENT
    申请人:Commissariat a lEnergie Atomique CEA；Commissariat a lEnergie Atomique et aux Energies Alternatives CEA；
    IPC主号:
    专利说明:

    MODULAR INFRARED RADIATION SOURCE
    DESCRIPTION
    TECHNICAL AREA
    The present invention relates to a modular infrared radiation source. In particular, the invention relates to an infrared radiation source adapted to modulate, by electrostatic actuation, its infrared emission spectrum.
    PRIOR ART
    Non-dispersive infrared sources (“NDIR” or “Non-Dispersive InfraRed” according to Anglo-Saxon terminology) are known from the state of the art, and are commonly used in gas detectors.
    By way of example, FIG. 1 illustrates an infrared micro-source known from the state of the art and described by Barritault etal. [1], In particular, the infrared microsource comprises a metallic filament formed on a membrane suspended by two suspension arms.
    The metallic filament, when traversed by an electric current, heats and emits infrared radiation according to the law of the black body.
    However, this infrared source known from the state of the art is not satisfactory.
    Indeed, the dynamics of starting and / or switching off this type of source is based on a very slow thermal equilibrium so that the modulation frequency of said source does not exceed one kilohertz.
    Also, since modulation frequencies of the order of ten kHz are required, in particular for photo acoustic detection of gases, quantum cascade lasers (hereinafter “QCL”) are generally used.
    However, the latter, due to their very low efficiency (less than 1%), consume too much energy.
    Furthermore, QCLs are generally associated with a cooling system, for example a Pelletier system, which affects the size of the system in which they are integrated.
    Finally, QCLs are also very expensive.
    An object of the present invention is therefore to propose a source of infrared radiation allowing modulation of said radiation at frequencies which can reach around ten kHz.
    Another object of the present invention is to provide a source of infrared radiation which does not require the use of a cooling system, and is therefore more compact.
    STATEMENT OF THE INVENTION
    The aims of the invention are at least partially achieved by a source of modular infrared radiation which comprises:
    - a support provided with a flat wall;
    - a membrane comprising two essentially parallel faces, called, respectively, front face and rear face, the membrane being adapted to emit infrared radiation on either of its faces and kept in suspension relative to the support, the rear face being opposite and at a distance D from the wall, said wall being further adapted to reflect the infrared radiation capable of being emitted by the membrane;
    - electrostatic actuation means adapted to vary the distance D;
    According to one embodiment, the membrane and the electrostatic actuation means are arranged so that, for each wavelength, the infrared radiation emitted by the rear face is reflected by the wall, passes through the membrane from its face back towards its front face and interferes with the infrared radiation emitted by the front face.
    According to one embodiment, the membrane comprises an emissive layer which, when it is traversed by a current, heats and emits infrared radiation.
    According to one embodiment, the membrane comprises from its front face to its rear face, a front dielectric layer, the emissive layer, and a rear dielectric layer.
    According to one embodiment, the electrostatic actuation means comprise two electrodes called, respectively, first electrode and second electrode, arranged opposite one another, and intended, by application of a difference in electrostatic potential between said electrodes, to vary the distance D.
    According to one embodiment, the wall forms the first electrode and the second electrode overlaps the rear face, the second electrode being at least partially transparent to infrared radiation capable of being emitted by the membrane.
    According to one embodiment, the second electrode is perforated so that said second electrode covers the rear face according to a covering factor of between 40% and 60%.
    According to one embodiment, the second electrode has at least one of the shapes chosen from: a grid, a circular spiral, a rectangular spiral, a coil.
    According to one embodiment, the second electrode comprises a metallic species, advantageously the metallic species comprises at least one of the elements chosen from: copper, aluminum, gold tungsten, platinum, silver, palladium, tantalum, molybdenum.
    According to one embodiment, the second electrode completely covers the rear face, advantageously, the second electrode is made of transparent conductive oxide.
    According to one embodiment, the support is a hermetically closed enclosure, inside which the membrane is arranged, and the environment of which is maintained at a pressure of less than 10 2 mbar, preferably between 10 3 mbar and 10 2 mbar.
    According to one embodiment, one and / or the other of the electrodes comprises a suitable trap, as soon as it is heated, to trap at least partially the gaseous species likely to be present in the enclosure , advantageously one and / or the other of the two electrodes comprises titanium and / or zirconium.
    According to one embodiment, the second electrode comprises the trap.
    According to an embodiment, the source further comprises a bandpass filter intended to filter the infrared radiation emitted by said source.
    The invention also relates to a photo acoustic gas detection device using the source according to the present invention.
    The invention also relates to a device for detecting gases by infrared spectroscopy implementing the source according to the present invention.
    The invention also relates to a method of manufacturing an infrared radiation source, the method comprising:
    a) a step of forming a membrane comprising two essentially parallel faces called, respectively, front face and rear face, the membrane being adapted to emit infrared radiation on either of its faces, the membrane being maintained suspended with respect to a support, the rear face opposite and at a distance D from a wall, said wall being further adapted to reflect the infrared radiation capable of being emitted by the membrane;
    b) the formation of electrostatic actuation means adapted to vary the distance D;
    the membrane and the electrostatic actuation means being arranged so that, for each wavelength, the infrared radiation emitted by the rear face, is reflected by the wall, passes through the membrane from its rear face towards its front face and interferes with infrared radiation emitted from the front panel.
    According to one embodiment, step a) comprises the formation of a stack on a first face of a support substrate, said stack being intended to form the membrane.
    According to one embodiment, the support substrate is assembled with a second support substrate, the assembly being advantageously hermetic, the second support substrate comprising a cavity whose bottom forms the wall, advantageously the wall is lined with a so-called electrode first electrode.
    According to one embodiment, the assembly of the support substrate and the second support substrate is followed by the formation of a through opening of the support substrate from a second face of said support substrate opposite to the first face, the formation of the through opening intended to release the membrane.
    According to one embodiment, step b) comprises the formation of a second electrode covering the membrane.
    According to one embodiment, a cover is formed to cover the through opening by the second face of the support substrate.
    BRIEF DESCRIPTION OF THE DRAWINGS
    Other characteristics and advantages will appear in the following description of embodiments of the modular infrared radiation source, given by way of nonlimiting examples, with reference to the appended drawings in which:
    - Figure 1 is an image, obtained by microscopy, of a resistive element known from the prior art;
    FIGS. 2a and 2b are schematic representations of a source of modular infrared radiation according to the present invention according to a section plane perpendicular to the membrane, in particular the potential difference between the two electrodes is zero and not zero, respectively, in Figure 2a and Figure 2b;
    - Figures 3a to 3d are schematic representations of second electrodes capable of being implemented in the present invention;
    - Figure 4 is a schematic representation, along a section plane perpendicular to the rear face, of a membrane capable of being implemented in the context of the present invention;
    - Figure 5 is a graphic representation of the emissivity (vertical axis) of the infrared source as a function of the wavelength λ (horizontal axis) for different distances D (curve A: D = 2.25 pm; curve B : D = 1.75 pm; curve C: D = 1.25 pm; curve D: D = 0.75 pm; curve E: D = 0.25 pm).
    - Figures 6a and 6b are graphic representations of the emissivity (along the vertical axis) of the infrared radiation source for different emission angles relative to a direction normal to said membrane (curve A at 0 °, curve B at +/- 10 °, θΐ curve C at +/- 20 °), the emissivity being given as a function of the wavelength (along the horizontal axis); in particular, FIG. 6a represents the emissivity of said source in the absence of electrostatic potential applied between the two electrodes, while in FIG. 6b, an electrostatic potential is imposed so as to displace the membrane by 250 nm;
    - Figure 7 is a schematic representation of the infrared source according to the present invention disposed in a sealed enclosure;
    - Figures 8a to 8e are a schematic representation of a method of manufacturing the modular infrared radiation source according to the present invention.
    DETAILED PRESENTATION OF PARTICULAR EMBODIMENTS
    The invention described in detail below uses a modular infrared radiation source which comprises a membrane adapted to emit infrared radiation along its two faces, called front face and rear face respectively. The membrane is, moreover, kept in suspension relative to a support, the rear face being opposite and at a distance D from a reflecting wall of said support.
    The infrared radiation source further comprises electrostatic actuation means which, by application of an electrical voltage, are adapted to vary the distance D.
    Thus, according to this arrangement, for any wavelength λ, the infrared radiation emitted by the rear face is reflected by the wall in the direction of the membrane, passes through the latter from its rear face towards its front face and interferes with the infrared radiation. emitted from the front panel. The interference state for each wavelength is then dependent on the variation in distance D imposed by the electrostatic actuation means.
    In FIGS. 2a to 7, one can see an infrared radiation source 100 according to the present invention.
    The infrared radiation source 100 includes a membrane 200 (Figures 2a and 2b).
    The membrane 200 comprises two essentially parallel faces called, respectively, front face 210 and rear face 220, and is adapted to emit infrared radiation according to either of its two faces (FIG. 2a, 2b, and 4).
    The membrane 200 can be square, rectangular, or even circular.
    The membrane 200 can also have a thickness of between 100 nm and 1 μm, in particular the membrane 200 can have a thickness of 200 nm.
    By "infrared radiation" is meant light radiation in a range of wavelengths between 1 pm and 12 pm, advantageously between 3 pm and 12 pm.
    Advantageously, the membrane 200 can comprise an emissive layer 230 which, when heated (for example when it is traversed by an electric current), produces and emits infrared radiation.
    It is therefore understood that the infrared radiation source 100 can comprise current generating means intended to force the passage of a current through the emissive layer 230.
    The emissive layer 230 may, for example, comprise a platinum layer 230a 30 nm thick interposed between two layers of TiN, 230b and 230c, 10 nm each (Figure 4).
    Still advantageously, the membrane 200 can comprise, from its front face 210 towards its rear face 220, a front dielectric layer 240, the emissive layer 230, and a rear dielectric layer 250 (FIGS. 2a, 2b and 4).
    The front 240 and rear 250 dielectric layers may comprise at least one of the elements chosen from: silicon dioxide, silicon nitride.
    The front 240 and rear 250 dielectric layers may have a thickness of between 50 nm and 500 nm.
    The infrared radiation source 100 further comprises a support 400 provided with a planar wall 410, said wall being adapted to reflect the infrared radiation capable of being emitted by the membrane 200.
    Within the meaning of the present invention, the term “wall” is assimilated to a face, advantageously plane.
    By "suitable for reflecting infrared radiation" is meant a wall having a reflection coefficient in the wavelength range of the infrared radiation considered greater than 75%, advantageously greater than 90%, even more advantageously greater than 95%.
    According to the present invention, the membrane 200 is kept in suspension relative to the support 400, the rear face 220 facing and at a distance D from the wall 410.
    By “kept in suspension” is meant a membrane 200 held on the support 400, for example, by two suspension arms 200a and 200b (FIGS. 2a and 2b).
    The infrared radiation source 100 also includes electrostatic actuation means 300 adapted to vary the distance D.
    By "electrostatic actuator" or "electrostatic actuating means" means means which make it possible to impose, in response to an electrostatic interaction, the relative displacement of two mobile components. In the context of the present invention, the electrostatic interaction can originate from a difference in electrostatic potential imposed between a first electrode 420 and a second electrode 430 secured (FIGS. 2a and 2b), respectively, of the support 400 and of the membrane 200 The distance D for which the difference in electrostatic potential between the first electrode 410 and the second electrode 420 is zero is called the distance at zero potential D o .
    The difference in electrostatic potential can for example be imposed by a voltage source. It is understood that the first electrode 420 and the second electrode 430 each comprise a connection terminal at the level of which an electrostatic potential can be imposed.
    The membrane 200 and the electrostatic actuating means 300 are arranged so that, for each wavelength λ, the infrared radiation emitted by the rear face 220 is reflected by the wall 410, passes through the membrane 200 from its rear face 220 towards its front face 210, and interferes with the infrared radiation emitted by the front face 210.
    In other words, for each wavelength λ, the infrared radiation emitted by the rear face 220 is imposed a difference in path or phase shift, relative to the infrared radiation emitted by the front face 210, due to the distance D and on reflection against the wall 410 (and to a lesser extent by its crossing of the membrane). The interference produced can then be constructive or destructive depending on the induced phase shift.
    It is understood that the above arrangement requires the rear face 220 and the wall 410 to be essentially parallel to each other.
    Advantageously, the wall 410 forms the first electrode 420. For example, the first electrode 420 is a layer, advantageously a metal layer. The metal layer can be an aluminum layer. The second electrode 430 (which is opposite the first electrode) is, under these conditions, overlapping the rear face 220, and is, at least partially, transparent to infrared radiation.
    By "at least partially transparent to infrared radiation" is meant a second electrode 430 which has a coefficient of transmission of infrared radiation greater than 40%, for example between 40% and 60%.
    According to a first embodiment, the second electrode 430 can be perforated. By “perforated electrode” is meant an electrically continuous electrode which has one or more through openings 431 (FIGS. 2a, 2b and 4a to 4d) making it possible to expose one or more rear zones 221 of the rear face 220.
    The through openings 431 advantageously have a dimension greater than 10 μm, preferably greater than 50 μm.
    According to this embodiment, the second electrode 430 can advantageously be made of a metallic species.
    The transparency of the second electrode 430 is then adjusted by the extent of the through openings 431. In particular, FIGS. 3a to 3d show forms of second electrodes capable of being implemented according to the first embodiment. As shown in these figures, the second electrode can have the form of a grid (Figure 3a), a coil (Figure 3b), a rectangular spiral (Figure 3c), or a circular spiral ( figure 3d). The invention is however not limited to these forms.
    Furthermore, as soon as it is metallic, the second electrode 430 can comprise at least one of the metals chosen from: aluminum, copper, tungsten gold, platinum, silver, palladium, tantalum, molybdenum.
    In operation, and according to this first embodiment in which the second electrode 430 is perforated and comprises a metallic species, only the rear zone or zones 221 not covered with metal, as well as the front zone or zones 211 of the front face 210 in gaze from the rear zones 221, are capable of emitting infrared radiation.
    The other zones of the front face 210 and of the rear face 220, due to their proximity to a second metal electrode, see their infrared radiation annihilated by said electrode. The annihilation of radiation is symbolized in Figures 2a and 2b by radiation crossed out with a cross (marks A, C, D and F).
    Thus, the infrared radiation emitted by the rear zone or zones 221, for each of its wavelengths, after reflection against the first electrode 420, passes through the membrane from its rear face 220 towards its front face 210 at the level of the rear zones 221 for interfering with the infrared radiation emitted at the level of the front zone or zones 211.
    As illustrated in FIG. 5, the interference state for each of the wavelengths of the infrared radiation emitted then depends on said wavelength and on the distance D, and in particular on the potential difference applied between the two electrodes.
    It is thus possible to modulate the amplitude of emission of the infrared source 100 by a simple mechanical displacement (in other words by modification of the distance D). More particularly, the modification of the distance D is carried out by application of a difference in electrostatic potential applied between the first electrode 410 and the second electrode 420.
    This effect is particularly advantageous, since the electrostatic activation has sufficient dynamics to achieve modulation of the emissivity of the infrared radiation source at frequencies greater than ten kilohertz, and which can potentially reach Megahertz.
    The infrared radiation source 100 according to the present invention can then be implemented in a gas detector operating on the principle of photo-acoustic detection, in particular for the detection of a gas having absorption at a wavelength d interest, noted λ 0 .
    Thus, the distance at zero potential D o can, for example, be the distance for which the radiation at the wavelength of interest λ 0 emitted by the rear face 220 destructively interferes with the radiation emitted by the front face 210.
    For example, the gas to be detected can be carbon dioxide (CO2) which has an absorption at the wavelength of interest λ 0 = 4.26 μm. The zero potential distance D o is then advantageously equal to 2.1 μm. As illustrated in FIG. 6a, the infrared radiation source has an emissivity dip at the wavelength λ 0 due to destructive interference. The displacement of the membrane by 0.25 pm at a distance Di = 1.85 pm by application of a difference in electrostatic potential between the two electrodes makes it possible to maximize the emissivity of the membrane at the wavelength λ 0 ( Figure 6b) thanks to constructive interference. The oscillation of the membrane between two positions corresponding to the distances D o and Di at a frequency greater than 10 kHz can then advantageously be used for the photo acoustic detection of a gas, and in particular CO2.
    The infrared radiation source can also be provided with a band pass filter.
    The bandpass filter, as soon as the infrared radiation source is used in a photo-acoustic detection device, can have a narrow passband, for example 0.2 μm in width so as to make the detector selective to a particular gas. For example, for a wavelength of interest λ 0 = 4.26 μm, the filter can have the passband 4.16 μm - 4.36 μm.
    The bandpass filter can also, for other applications such as infrared spectroscopy, have a wider bandwidth.
    The inventors have also demonstrated by numerical simulation that the modulation of the emissivity spectrum of the membrane is effective in a cone of 40 ° relative to the normal of the surface of said membrane (Figures 6a and 6b)
    The invention also relates to a second embodiment which differs from the first embodiment in that the second electrode 430 completely covers the rear face 220, advantageously, the second electrode is made of transparent conductive oxide. According to this embodiment, and unlike the first embodiment, the entire front face 210 and the rear face 220 are emissive. By "transparent" is meant a transparent conductive oxide having an extinction coefficient k, at the wavelengths involved, of less than 0.25.
    According to either of the two embodiments, the support 400 can be a hermetically closed enclosure, inside which the membrane is arranged, and whose environment is maintained at a pressure of less than 10 ' 2 mbar, preferably between 10 ' 3 mbar and 10' 2 mbar (Figure 7).
    The implementation of the hermetically closed enclosure makes it possible to limit the losses by thermal conduction in the air.
    The enclosure can advantageously be made of a material transparent to infrared radiation, for example silicon.
    Furthermore, the second electrode 420 may comprise a trap or getter in English suitable, as soon as it is heated, to trap at least partially the gaseous species likely to be present in the enclosure.
    In general, such a trap is implemented during the encapsulation of the membrane in a hermetically closed enclosure (also called “packaging” step), in order to ensure a vacuum in said enclosure and thus limit the losses of infrared radiation. likely to be emitted by the membrane.
    However, at the end of the “packaging” stage, the trap, more precisely its surface, is not saturated. Indeed, the gaseous species trapped at the surface of the trap migrate under the effect of temperature in the volume of the trap (in the mass of said trap) so that the surface of the latter is regenerated. In other words, the trap can still absorb gaseous species as soon as means are used so that it is heated to a temperature, called activation temperature.
    In this regard, the vacuum in the airtight enclosure can deteriorate (increase in pressure) during the operation of the membrane. For example, an increase in the pressure in the enclosure can result from the desorption of gaseous species at the level of the membrane 200, in particular when the latter is heated to emit infrared radiation. This increase in pressure inside the enclosure degrades the thermal efficiency of the infrared radiation source 100. The implementation of the trap makes it possible to respond to this problem.
    In fact, according to the present invention, when the membrane 200 is heated to produce infrared radiation, the second electrode 430 provided with the trap, which is located near said electrode, also sees its temperature increase to a temperature higher than the temperature d activation of the trap. In other words, heating the membrane makes it possible to continuously heat the trap so that the latter absorbs the gaseous species capable of being desorbed by the membrane. Thus the vacuum in the enclosure can be maintained at a level compatible with the requirements in terms of thermal and / or infrared losses.
    Advantageously, a second electrode 420 made of titanium and / or zirconium forms a trap for gaseous species.
    Indeed, both titanium and zirconium are the materials of choice for forming the second electrode 420. These elements can advantageously play the role of pump (or micro-pump), and thus absorb, at least in part, species capable of be desorbed by the membrane 200. The infrared radiation source according to the present invention can be used for gas detection by infrared spectroscopy, in particular for the detection of several gases without necessarily having to use a filter but by putting at profit the modulation of the emissivity of the infrared source.
    The invention also relates to a gas detection device by infrared spectroscopy.
    The manufacture of the infrared source 200 according to the present invention implements standard micro-manufacturing steps known to those skilled in the art.
    A first manufacturing step 1) illustrated in FIG. 8a comprises the formation of a stack 20 on a support substrate 10, for example a silicon support substrate.
    The stack 20 is in particular intended to form the membrane 200.
    In this regard, the stack may include a heating element 21 intended to heat an emissive layer 22, both interposed between two layers made of a dielectric material 23 and 24, for example silicon dioxide. In addition, the heating element 21 and the emissive layer 22 can be embedded in another dielectric layer 25, for example made of silicon nitride.
    The first step 1) also includes the formation of an electrode 26 (second electrode within the meaning of the present invention) directly above the heating element 21 and the emissive layer 22.
    The different stages of formation of the stack 20 call on micro-fabrication techniques known to those skilled in the art and are not described in the present invention.
    The manufacturing process includes a second step 2) illustrated in Figure 8b.
    The second step 2) comprises the formation of a first bonding structure 30, made for example of gold and chromium, and delimiting a region of membrane 31 inside which the membrane is located. This step can involve one or more metallic deposits (for example by evaporation) as well as photolithography / etching steps.
    The second step 2) further comprises the formation of a trench 32 crossing the stack 20, and defining the membrane at the level of the membrane region 31. The trench 32 can be formed by etching, for example dry etching.
    A third step 3), illustrated in FIG. 8c, can then be carried out.
    The third step includes the formation of a cavity 41, for example by dry etching, along one face of a second support substrate 40. According to this third step, the cavity 41 is also lined with an electrode 42, called the first electrode according to the present invention.
    The third step 3) is then followed by a fourth step 4) of assembling the support substrate 10 and the second support substrate 40 (FIG. 8d) to form a first assembly 50. The assembly is carried out so as to match (or opposite), the first and second electrodes. A hermetic seal between the support substrate 10 and the second support substrate 40 is then provided by the first bonding structure 30.
    The fourth step 4) further comprises the formation of a through opening 51 at the level of the support substrate 10 intended to release the membrane. The formation of the through opening 51 may be preceded by a thinning of the support substrate 10 by mechanical abrasion for example.
    A second bonding structure 52 is also formed, directly above the first bonding structure 30, on a free face of the first assembly 50 at the support substrate 10. In particular, the second bonding structure surrounds the through opening 51.
    Finally, the manufacturing process comprises a fifth step shown in FIG. 8e of forming a cover 60 intended to hermetically enclose the membrane in an enclosure.
    The fifth step therefore comprises the bonding of the cover 60 to cover the through opening 51. The hermetic sealing of the cover 60 is ensured by the second bonding structure 52. The cover 60 can also be provided with anti-reflective layers 61 and 62 on the 'one and / or the other of its faces.
    The pressure of the cavity thus formed can be controlled during the step of bonding the cover, for example by thermally activating a trap placed in the cavity. As specified in the present description, the second electrode may comprise the trap, in particular said second electrode may be made of a trap material, for example made of titanium and / or zirconium.
    REFERENCES [1] Pierre Barritault et al., Mid-IR source based on a free-standing microhotplate for autonomous CO2 sensing in indoor- applications, Sensors and Actuators A, 172, p. 379385, (2011).
    权利要求:
    Claims (20)
    [1" id="c-fr-0001]
    1. Modular infrared radiation source (100) which includes:
    - A support (400) provided with a flat wall (410);
    - A membrane (200) comprising two essentially parallel faces called, respectively, front face (210) and rear face (220), the membrane (200) being adapted to emit infrared radiation on either of its faces , and kept in suspension relative to the support (400), the rear face (220) facing and at a distance D from the wall (410), said wall (410) being further adapted to reflect the infrared radiation capable of be emitted by the membrane (200);
    - electrostatic actuation means (300) adapted to vary the distance D;
    the membrane (200) and the electrostatic actuation means (300) being arranged so that, for each wavelength, the infrared radiation emitted by the rear face (220), is reflected by the wall (410), passes through the membrane (200) from its rear face (220) towards its front face (210) and interferes with the infrared radiation emitted by the front face (210).
    [2" id="c-fr-0002]
    2. Source according to claim 1, in which the membrane (200) comprises an emissive layer (230) which, when it is traversed by a current, heats and emits infrared radiation.
    [3" id="c-fr-0003]
    3. Source according to claim 2, wherein the membrane (200) comprises from its front face (210) towards its rear face (220), a front dielectric layer (240), the emissive layer (230), and a dielectric layer rear (250).
    [4" id="c-fr-0004]
    4. Source according to one of claims 1 to 3, wherein the electrostatic actuating means (300) comprise two said electrodes, respectively, first electrode (420) and second electrode (430), arranged opposite one of the other, and intended, by application of a difference in electrostatic potential between said electrodes, to vary the distance D.
    [5" id="c-fr-0005]
    5. Source according to claim 4, in which the wall (410) forms the first electrode (420) and the second electrode (430) overlaps the rear face (220), the second electrode (430) being at least partially transparent to infrared radiation capable of being emitted by the membrane (200).
    [6" id="c-fr-0006]
    6. A source according to claim 5, in which the second electrode (430) is perforated so that said second electrode (430) covers the rear face (220) according to a recovery factor of between 40% and 60%.
    [7" id="c-fr-0007]
    7. Source according to claim 6, in which the second electrode (430) has at least one of the shapes chosen from: a grid, a circular spiral, a rectangular spiral, a serpentine.
    [8" id="c-fr-0008]
    8. Source according to claim 6 or 7, in which the second electrode (430) comprises a metallic species, advantageously the metallic species comprising at least one of the elements chosen from: copper, aluminum, gold tungsten, platinum, silver, palladium, tantalum, molybdenum.
    [9" id="c-fr-0009]
    9. Source according to claim 5, wherein the second electrode (430) completely covers the rear face (220), advantageously, the second electrode (430) is made of transparent conductive oxide.
    [10" id="c-fr-0010]
    10. Source according to one of claims 1 to 9, in which the support (400) is a hermetically closed enclosure, inside which the membrane (200) is disposed, and the environment of which is maintained at a pressure less than 10 2 mbar, preferably between 10 3 mbar and 10 2 mbar.
    [11" id="c-fr-0011]
    11. A source according to claim 9 in combination with claim 4, in which one and / or the other of the electrodes comprises a trap adapted, as soon as it is heated, to trap at least partially gaseous species capable of to be present in the enclosure, advantageously one and / or the other of the two electrodes comprises titanium and / or zirconium.
    [12" id="c-fr-0012]
    12. Source according to one of claims 1 to 11, in which the source 100 further comprises a bandpass filter intended to filter the infrared radiation emitted by said source.
    [13" id="c-fr-0013]
    13. Photo acoustic gas detection device comprising the source (100) according to one of claims 1 to 12.
    [14" id="c-fr-0014]
    14. Device for detecting gas by infrared spectroscopy comprising the source (100) according to one of claims 1 to 12.
    [15" id="c-fr-0015]
    15. Method for manufacturing an infrared radiation source, the method comprising:
    a) a step of forming a membrane (200) comprising two essentially parallel faces called, respectively, front face (210) and rear face (220), the membrane (200) being adapted to emit infrared radiation according to one and the other of its faces, the membrane being held in suspension relative to a support (400), the rear face (220) facing and at a distance D from a wall (410), said wall (410) being further adapted to reflect infrared radiation capable of being emitted by the membrane (200);
    b) the formation of electrostatic actuation means (300) adapted to vary the distance D;
    the membrane (200) and the electrostatic actuation means (300) being arranged so that, for each wavelength, the infrared radiation emitted by the rear face (220) is reflected by the wall (410), passes through the membrane (200) from its rear face (220) to its front face (210) and interferes with the infrared radiation emitted by the front face (210).
    [16" id="c-fr-0016]
    16. The method of claim 15, wherein step a) comprises the formation of a stack (20) on a first face of a support substrate (10), said stack (20) being intended to form the membrane ( 200).
    [17" id="c-fr-0017]
    17. The method of claim 16, wherein the support substrate (10) is assembled with a second support substrate (40), the assembly being advantageously hermetic, the second support substrate (40) comprising a cavity (41) whose bottom forms the wall (410), advantageously the wall (410) is lined with an electrode (42) called the first electrode.
    [18" id="c-fr-0018]
    18. The method of claim 17, wherein the assembly of the support substrate (10) and the second support substrate (40) is followed by the formation of a through opening (51) of the support substrate (10) from a second face of said support substrate (10) opposite the first face, the formation of the through opening (51) intended to release the membrane (200).
    [19" id="c-fr-0019]
    19. The method of claim 18, wherein step b) comprises forming a second electrode (26) covering the membrane (200).
    [20" id="c-fr-0020]
    20. The method of claim 19, wherein a cover (60) is formed in recovery of the through opening (51) by the second face of the support substrate.
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    同族专利:
    公开号 | 公开日
    US10401282B2|2019-09-03|
    US20190120755A1|2019-04-25|
    FR3072788B1|2020-05-29|
    EP3477280A1|2019-05-01|
    EP3477280B1|2020-09-09|
    引用文献:
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    US6344647B1|1997-09-19|2002-02-05|Commissariat A L' Energie Atomique|Miniaturized photoacoustic spectrometer|
    WO2013167874A1|2012-05-08|2013-11-14|Cambridge Cmos Sensors Limited|Ir emitter and ndir sensor|
    EP3096345A1|2015-05-22|2016-11-23|CSEM Centre Suisse d'Electronique et de Microtechnique SA - Recherche et Développement|Infrared emitter|
    WO2017060264A2|2015-10-05|2017-04-13|Sintef Tto As|Infrared radiation source|
    EP3153831A1|2015-10-09|2017-04-12|Commissariat à l'Energie Atomique et aux Energies Alternatives|Bolometer with high spectral sensitivity|
    FR2750248B1|1996-06-19|1998-08-28|Org Europeene De Rech|NON-EVAPORABLE GETTER PUMPING DEVICE AND METHOD FOR IMPLEMENTING THE GETTER|
    TW533188B|2001-07-20|2003-05-21|Getters Spa|Support for microelectronic, microoptoelectronic or micromechanical devices|
    FR2922202B1|2007-10-15|2009-11-20|Commissariat Energie Atomique|STRUCTURE COMPRISING A GETTER LAYER AND AN ADJUSTMENT SUB-LAYER AND METHOD OF MANUFACTURE|
    FR2933389B1|2008-07-01|2010-10-29|Commissariat Energie Atomique|STRUCTURE BASED ON SUSPENDED GETTER MATERIAL|
    US20160142005A1|2014-11-14|2016-05-19|University Of Utah Research Foundation|Thermophotovoltaic system having a self-adjusting gap|
    EP3368871A1|2015-11-26|2018-09-05|Sensirion AG|Infrared device|FR3056306B1|2016-09-20|2019-11-22|Commissariat A L'energie Atomique Et Aux Energies Alternatives|OPTICAL GUIDE HAVING A PSEUDO-GRADIENT INDEX RISE|
    FR3072458A1|2017-10-12|2019-04-19|Commissariat A L'energie Atomique Et Aux Energies Alternatives|SOURCE OF INFRARED RADIATION|
    FR3074587B1|2017-12-06|2020-01-03|Commissariat A L'energie Atomique Et Aux Energies Alternatives|PHOTONIC CHIP WITH OPTICAL PATH FOLDING AND INTEGRATED COLLIMATION STRUCTURE|
    FR3077652A1|2018-02-05|2019-08-09|Commissariat A L'energie Atomique Et Aux Energies Alternatives|PHOTONIC CHIP WITH INTEGRATED COLLIMATION STRUCTURE|
    法律状态:
    2019-04-26| PLSC| Search report ready|Effective date: 20190426 |
    2019-10-31| PLFP| Fee payment|Year of fee payment: 3 |
    2020-10-30| PLFP| Fee payment|Year of fee payment: 4 |
    优先权:
    申请号 | 申请日 | 专利标题
    FR1760055A|FR3072788B1|2017-10-24|2017-10-24|MODULAR INFRARED RADIATION SOURCE|
    FR1760055|2017-10-24|FR1760055A| FR3072788B1|2017-10-24|2017-10-24|MODULAR INFRARED RADIATION SOURCE|
    US16/167,972| US10401282B2|2017-10-24|2018-10-23|Modular infrared radiation source|
    EP18201904.2A| EP3477280B1|2017-10-24|2018-10-23|Modular infrared radiation source|
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